Ultra‐Low Voltage and Ultra‐Low Power Consumption Nonvolatile Operation of a Three‐Terminal Atomic Switch
Source abstract
Abstract
Nonvolatile three-terminal operation, with a very small range of bias sweeping (−80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (<1 pA), is demonstrated using an Ag (gate)/Ta2O5 (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
World Premier International (WPI) Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) Namiki 1‐1 Tsukuba Ibaraki 305‐0044 Japan
Japan Science and Technology Agency CREST Chiyoda Tokyo 102‐0075 Japan
School of Physical Science and Technology Lanzhou University Lanzhou 730000 China
Faculty of Science and Engineering Waseda University 3‐4‐1 Ookubo Shinjuku‐ku Tokyo 169‐8555 Japan
Funding
Japan Science and Technology Agency (JST)/CREST · National Natural Science Foundation of China
References (26)
Show source-provided references
1. International Technology Roadmap for Semiconductors (ITRS) Emerging Research Devices 2013 available from:www.itrs.net/ITRS%201999‐2014%20mTGS %20Presentations%20&%20Links/2013ITRS/2013Chapters/2013ERD.pdf accessed: August 2015.
2. 10.1038/nmat202310.1038/nmat2023 ↗
3. 10.1557/mrs2009.21510.1557/mrs2009.215 ↗
4. 10.1002/adma.20090037510.1002/adma.200900375 ↗
5. 10.1038/nnano.2012.24010.1038/nnano.2012.240 ↗
6. 10.1557/mrs.2012.510.1557/mrs.2012.5 ↗
7. 10.1016/j.mser.2014.06.00210.1016/j.mser.2014.06.002 ↗
8. 10.1088/0957-4484/22/48/48520310.1088/0957-4484/22/48/485203 ↗
9. 10.1038/nmat307010.1038/nmat3070 ↗
10. Hsu C. W. · VLSI Symp. Tech Dig. · 2013 · 166
11. Govoreanu B. · 2011 · 31.6.1
12. 10.1038/nature0319010.1038/nature03190 ↗
13. 10.1109/JSSC.2004.83724410.1109/JSSC.2004.837244 ↗
14. 10.1038/nature0894010.1038/nature08940 ↗
15. 10.1088/0957-4484/21/42/42520510.1088/0957-4484/21/42/425205 ↗
16. 10.1143/APEX.4.01520410.1143/APEX.4.015204 ↗
17. 10.1002/adma.20110259710.1002/adma.201102597 ↗
18. 10.1088/0957-4484/26/14/14570210.1088/0957-4484/26/14/145702 ↗
19. 10.1002/adma.20110410410.1002/adma.201104104 ↗
20. 10.1021/jp305482c10.1021/jp305482c ↗
21. 10.1063/1.480209210.1063/1.4802092 ↗
22. 10.1038/ncomms523210.1038/ncomms5232 ↗
23. 10.1002/adma.20140012710.1002/adma.201400127 ↗
24. 10.1002/adfm.20150085310.1002/adfm.201500853 ↗
25. 10.1088/0957-4484/22/25/25401310.1088/0957-4484/22/25/254013 ↗
26. 10.1002/adfm.20110184610.1002/adfm.201101846 ↗