journal article·2015-10Open access

Ultra‐Low Voltage and Ultra‐Low Power Consumption Nonvolatile Operation of a Three‐Terminal Atomic Switch

Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Masakazu Aono, Tsuyoshi Hasegawa

Advanced Materials· Volume 27· Issue 39

Abstract

Nonvolatile three-terminal operation, with a very small range of bias sweeping (−80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (<1 pA), is demonstrated using an Ag (gate)/Ta2O5 (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

World Premier International (WPI) Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) Namiki 1‐1 Tsukuba Ibaraki 305‐0044 Japan

Japan Science and Technology Agency CREST Chiyoda Tokyo 102‐0075 Japan

School of Physical Science and Technology Lanzhou University Lanzhou 730000 China

Faculty of Science and Engineering Waseda University 3‐4‐1 Ookubo Shinjuku‐ku Tokyo 169‐8555 Japan

Funding

Japan Science and Technology Agency (JST)/CREST · National Natural Science Foundation of China

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