Residual Layer Self‐Removal in Imprint Lithography

A new method for imprinting residual-layer free polymer micro- and nano structures, particularly 3-D structures with overhang, is demonstrated. This simple and versatile method induces self-removal of the residual layer by controlled failure of the patterned film along the edges of the imprinted features. Pristine overhang structures down to ∼500 nm diameter are realized without exposure to plasma or chemical etchants.