Resistive Switching: Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM (Adv. Mater. 14/2012)
Source abstract
Abstract
M. Liu and co-workers present an effective methodology on page 1844 to investigate in real-time the evolution of growth/dissolution of conductive filaments (CFs) in oxide-electrolyte resistance random access memory (RRAM). Contrary to common belief, it is found that CF growth begins at the anode (Ag or Cu), rather than having to reach the cathode (Pt) and grow backwards. A modified microscopic mechanism is also determined for the switching behavior of oxide-electrolyte RRAM.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · CCD and CMOS Imaging Sensors · Machine Learning and ELM
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