journal article·2009-12-28

Interface Atomic‐Scale Structure and its Impact on Quantum Electron Transport

Zhongchang Wang, Mitsuhiro Saito, Susumu Tsukimoto, Yuichi Ikuhara

Advanced Materials· Volume 21· Issue 48
Publisher page

Abstract

Local structure, chemistry, and bonding at interfaces often radically affect the properties of materials. A combination of scanning transmission electron microscopy and density functional theory calculations reveals an atomic layer of carbon at a SiC/Ti3 SiC2 interface in Ohmic contact to p-type SiC, which results in stronger adhesion, a lowered Schottky barrier, and enhanced transport. This is a key factor to understanding the origin of the Ohmic nature.
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Research context

OpenAlex topics: Semiconductor materials and devices · MXene and MAX Phase Materials · Semiconductor materials and interfaces

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