Patterned Growth and Transfer of ZnO Micro and Nanocrystals with Size and Location Control
Source abstract
Abstract
A method to fabricate and transfer crystalline ZnO with control over location, orientation, size, and shape is reported. The process uses an oxygen plasma treatment in combination with a photoresist pattern on magnesium-doped GaN substrates to define narrow nucleation regions and attachment points with 100 nanometer scale dimensions. Lateral epitaxial overgrowth follows nucleation to produce single-crystalline ZnO shown in the figure.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
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23. Additional transition region information: The transitional region consists of a gradient of Mg dopand sites which were partially shielded from the oxidative effects of the plasma yet permits ZnO to deposit in solution. The oxygen plasma etching of photoresist is widely used in industry and has been successfully modeled by the Hougen–Watson method as the ion‐assisted chemical etch of Novolac polymer chains by oxygen radicals [25]. Oxygen radicals impact and react with the photo resist to break covalent CC bonds (3.6 eV per bond) to separate the original polymer chains and/or remove some material as volatile products such as COxand H2. Oxygen plasma etching results from breakage of carbon bonds responsible for chain cohesion then atomization of shortened chain constituents to expose unreacted long photoresist chains below. The process can be interrupted which leaves a transitional region that includes a photoresist layer with shortened polymer chains and substrate surface region that transitions from “no” to “full” oxygen plasma exposure. We have conducted oxygen plasma etching experiments which support the model. Photoresist was patterned on a substrate then half of the substrate was covered with a glass slide. The substrate was exposed to oxygen plasma such that slide‐covered areas were protected from plasma exposure. Exposure to oxygen plasma was found to cause lateral etching of the photoresist. The lateral photoresist etch rate was experimentally determined as 125 nm min−1. The reaction time required to vaporize the photoresist implies that a sub‐100 nm transition region forms at the point where photoresist chains transition from initial polymer chain length to shortened volatile hydrocarbons.
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