journal article·2014-04

Pressure‐Induced Superconductivity and Its Scaling with Doping‐Induced Superconductivity in the Iron Pnictide with Skutterudite Intermediary Layers

Peiwen Gao, Liling Sun, Ni Ni, Jing Guo, Qi Wu, Chao Zhang, Dachun Gu, Ke Yang, Aiguo Li, Sheng Jiang, Robert Joseph Cava, Zhongxian Zhao

Advanced Materials· Volume 26· Issue 15
Publisher page

Abstract

Pressure-induced superconductivity is oberserved in Ca10(Pt3As8)(Fe2As2)5 by in situ high-pressure resistance and magnetic susceptibility measurements. Scaling of the pressure-induced and doping-induced superconductivity shows that the electronic phase diagrams of the pressurized and chemically doped 10–3–8 compound are similar in the moderate pressure and doping range but are disparate at higher pressure and heavy doping. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
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Research context

OpenAlex topics: Iron-based superconductors research · Corporate Taxation and Avoidance · Rare-earth and actinide compounds

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Physics and Beijing National Laboratory for Condensed Matter Physics Chinese Academy of Sciences Beijing 100190 China

Department of Chemistry Princeton University Princeton NJ 08544 USA

Los Alamos National Laboratory Los Alamos NM 87544 USA

Department of Physics and Astronomy UCLA Los Angeles CA 90095 USA

Shanghai Synchrotron Radiation Facilities Shanghai Institute of Applied Physics, Chinese Academy of Sciences Shanghai 201204 China

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