journal article·2014-02

Determination of Polarization‐Fields Across Polytype Interfaces in InAs Nanopillars

Luying Li, Zhaofeng Gan, Martha R. McCartney, Hanshuang Liang, Hongbin Yu, Wan‐Jian Yin, Yanfa Yan, Yihua Gao, Jianbo Wang, David J. Smith

Advanced Materials· Volume 26· Issue 7
Publisher page

Abstract

Polarization fields within InAs nanopillars with zincblende(ZB)/wurtzite(WZ) polytype stacking are quantified. The displacement of charged ions inside individual tetrahedra of WZ regions is measured at the atomic scale. The variations of spontaneous polarization along the interface normal are related to strain at interfaces of different polytypes. Thus, direct correlation between local atomic structure and electric properties is demonstrated.
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Research context

OpenAlex topics: Nanowire Synthesis and Applications · Machine Learning in Materials Science · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Nanoscale Characterization and Devices Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan 430074 China

Department of Physics Arizona State University Tempe Arizona 85287–1504 USA

School of Electrical, Computer, and Energy Engineering Arizona State University Tempe Arizona 85287–5706 USA

Department of Physics and Astronomy The University of Toledo Toledo Ohio 43606 USA

School of Physics Huazhong University of Science and Technology Wuhan 430074 China

School of Physics and Technology Center for Electron Microscopy and MOE Key Laboratory of Artificial Micro‐ and Nano‐Structures Wuhan University Wuhan 430072 China

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