Initialization‐Free Multilevel States Driven by Spin–Orbit Torque Switching

By engineering multidomain formation in Co/Pt multilayers, it is demonstrated how multilevel storage can be achieved by spin–orbit torque switching. It is rather remarkable that, by modulating the writing pulse conditions, the final magnetization states can be controlled, independent of the initial configurations. The initialization-free multilevel memory advances the spin–orbit-torque magnetic random access memory to higher storage density for practical applications. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.