Highly Asymmetric n⁺–p Heterojunction Quantum‐Dot Solar Cells with Significantly Improved Charge‐Collection Efficiencies

The depletion region width of metal-oxide/quantum-dot (QD) heterojunction solar cells is increased by a new method in which heavily boron-doped n+-ZnO is employed. It is effectively increased in the QD layer by 30% compared to the counterpart with conventional n-ZnO, and provides 41% and 37% improvement of Jsc (16.7 mA cm−2 to 23.5 mA cm−2) and power conversion efficiency (5.52% to 7.55%), respectively. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.