journal article·2012-11-14

Phototransistors: High‐Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared (Adv. Mater. 43/2012)

Woong Choi, Mi Yeon Cho, Aniruddha Konar, Jong Hak Lee, Gi‐Beom Cha, Soon Cheol Hong, Sangsig Kim, Jeongyong Kim, Debdeep Jena, Jinsoo Joo, Sunkook Kim

Advanced Materials· Volume 24· Issue 43
Publisher page

Abstract

Sunkook Kim, Jinsoo Joo, and co-workers demonstrate on page 5832 phototransistors based on multilayer MoS2 crystals with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. These multilayer MoS2 phototransistors also exhibit high room-temperature mobilities, near-ideal subthreshold swings, low operating gate biases, and negligible shifts in the threshold voltages during illumination.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Gas Sensing Nanomaterials and Sensors · Chalcogenide Semiconductor Thin Films

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