Phototransistors: High‐Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared (Adv. Mater. 43/2012)
Source abstract
Abstract
Sunkook Kim, Jinsoo Joo, and co-workers demonstrate on page 5832 phototransistors based on multilayer MoS2 crystals with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. These multilayer MoS2 phototransistors also exhibit high room-temperature mobilities, near-ideal subthreshold swings, low operating gate biases, and negligible shifts in the threshold voltages during illumination.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Gas Sensing Nanomaterials and Sensors · Chalcogenide Semiconductor Thin Films
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