Kinetics and Mechanism of Atomic Force Microscope Local Oxidation on Hydrogen‐Passivated Silicon in Inert Organic Solvents
Source abstract
Abstract
Conductive atomic force microscope (AFM) nanopatterning on hydrogen-terminated silicon in a hydrophobic organic solvent under ambient conditions produces features consistent with AFM field-induced oxidation. The growth rate of the oxide features (see figure) exhibits modulation consistent with a space-charge-limited growth mechanism.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Force Microscopy Techniques and Applications · Integrated Circuits and Semiconductor Failure Analysis · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (35)
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