Resistive Switching Phenomena in LixCoO2 Thin Films
Source abstract
Abstract
A substantial resistive switching of LixCoO2 mixed-conductor thin films is observed for the first time. The occurrence of possible bipolar switching in these oxide thin films is by current–voltage curves, investigated by conducting-probe atomic force microscopy (CP-AFM). The films are incorporated into an {Au/LixCoO2/p++Si} device and exhibit a significant resistive-switching process involving a ratio of over four orders of magnitude.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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