Fabrication and Impedance Analysis of n‐ZnO Nanorod/p‐Si Heterojunctions to Investigate Carrier Concentrations in Zn/O Source‐ Ratio‐Tuned ZnO Nanorod Arrays
Source abstract
Abstract
Charge-carrier concentrations of well-aligned ZnO nanorods grown on p++-Si substrates are determined by means of ac impedance analysis of devices fabricated directly on as-deposited samples. This approach also demonstrates that the carrier concentration can be controlled by varying the Zn/O source molar ratio (MR) during metal–organic chemical vapor deposition (see figure).
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Nanowire Synthesis and Applications
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