Simple, Inexpensive, and Rapid Approach to Fabricate Cross‐Shaped Memristors Using an Inorganic‐Nanowire‐Digital‐Alignment Technique and a One‐Step Reduction Process

A rapid, scalable, and designable approach to produce a cross-shaped memristor array is demonstrated using an inorganic-nanowire digital-alignment technique and a one-step reduction process. Two-dimensional arrays of perpendicularly aligned, individually conductive Cu-nanowires with a nanometer-scale CuxO layer sandwiched at each cross point are produced. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.