Enhancement of Radiative Recombination in Silicon via Phonon Localization and Selection‐Rule Breaking
Source abstract
Abstract
Enhanced radiative recombination in a periodically nanoengineered silicon- on-insulator structure (see figure and cover) is studied using micro-Raman, photoluminescence, and photocurrent spectroscopies. It is shown that the enhancement is due to phonon- localization effects, leading to a relaxation of the fundamental k-selection rule disfavoring light emission in bulk silicon.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Thermal properties of materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
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