Microstructure and Composition of Focused‐Ion‐Beam‐Deposited Pt Contacts to GaN Nanowires

Characterization of focused ion beam (FIB)-deposited Pt contacts to GaN nanowires (see Figure, green) shows that these contacts contain high densities of Pt nanocrystallites (red) embedded in an amorphous C + Ga matrix (purple). Regions with lower Pt nanocrystallite densities (light blue) have also been found. Sputter damage generally removes the top of the GaN layer, leaving a disordered region below. These observations suggest reasons for the unusually low resistance of FIB-deposited Pt contacts to GaN nanowires.