Temperature Dependence of Si Nanowire Morphology
Source abstract
Abstract
Si nanostructures, including plain, tadpole-like, and chain-like nanowires(see Figure) have been fabricated under well-defined conditions. The morphology of the nanowires and the growth mechanism are shown to be dependent on the growth/substrate temperature, and can be explained by the existence of a spheroidization process.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Anodic Oxide Films and Nanostructures · Advancements in Semiconductor Devices and Circuit Design
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