journal article·2026-01-04

Artificial Refractory Neuron Based on Cs 2 AgBiBr 6 Nanoionic Memristor for Efficient Motion Information Processing

Xuerong Liu, Mengjie Shao, Xiaojian Zhu, Lixun Wang, Hongwei Tan, Cong Hu, Yuejun Zhang, Run‐Wei Li

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Abstract

ABSTRACT Biological neurons are highly efficient in encoding motion information, and their physical realization can inspire the development of emerging bionic machine vision technologies for autonomous driving and video monitoring applications. However, due to the difficulty in emulating the complex ion movement dynamics within neurons, the use of hardware to comprehensively emulate neuronal firing dynamics for encoding function replication remains challenging. Herein, we report a bio‐inspired artificial neuron based on a Cs 2 AgBiBr 6 memristor, which can replicate both neuronal firing and refractory period behaviors for motion information processing. We demonstrate that the bidirectional migration of Ag + and Br − ions within Cs 2 AgBiBr 6 can induce threshold conductance switching along with a strong built‐in internal electric potential, mimicking neuronal excitation–resting responses to voltage pulse stimuli. The artificial neurons can dynamically respond to continuous inputs from moving objects, encoding motion features (such as velocity, direction, and acceleration), into compressed feature maps for accurate classification and trajectory prediction. Our biomimetic encoding and prediction framework offers a promising strategy for developing neuromorphic systems with biologically realistic behaviors that may rival the capabilities of the human brain in processing complex dynamic information.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Advanced Sensor and Energy Harvesting Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Zhejiang Key Laboratory of Magnetic Materials and Applications Ningbo Institute of Materials Technology & Engineering CAS Ningbo China

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing China

University of Chinese Academy of Sciences Beijing China

Faculty of Electrical Engineering and Computer Science Ningbo University Ningbo China

Max Planck Institute for Polymer Research Mainz Germany

Eastern Institute of Technology Ningbo China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China · Chinese Academy of Sciences · Natural Science Foundation of Zhejiang Province

References (45)

Show source-provided references
1. 10.1038/s41586‐024‐08253‐810.1038/s41586‐024‐08253‐8 ↗
2. 10.1038/s41928‐024‐01277‐y10.1038/s41928‐024‐01277‐y ↗
3. 10.1038/s41467‐025‐56079‐310.1038/s41467‐025‐56079‐3 ↗
4. 10.1038/s41565‐023‐01379‐210.1038/s41565‐023‐01379‐2 ↗
5. 10.1038/s41565‐021‐01003‐110.1038/s41565‐021‐01003‐1 ↗
6. 10.1038/s41928‐020‐0429‐510.1038/s41928‐020‐0429‐5 ↗
7. 10.1038/s42256‐019‐0134‐010.1038/s42256‐019‐0134‐0 ↗
8. 10.1038/d41586‐020‐00592‐610.1038/d41586‐020‐00592‐6 ↗
9. 10.1038/nature0615010.1038/nature06150 ↗
10. 10.1038/s41467‐023‐37886‐y10.1038/s41467‐023‐37886‐y ↗
11. 10.1038/nature0714010.1038/nature07140 ↗
12. 10.1038/s41586‐019‐1677‐210.1038/s41586‐019‐1677‐2 ↗
13. 10.1038/s41586‐020‐2130‐210.1038/s41586‐020‐2130‐2 ↗
14. 10.1016/j.neuron.2009.12.00910.1016/j.neuron.2009.12.009 ↗
15. 10.1038/nrn231510.1038/nrn2315 ↗
16. 10.1126/science.aas916010.1126/science.aas9160 ↗
17. 10.1126/science.adu982810.1126/science.adu9828 ↗
18. 10.1080/14686996.2023.218371210.1080/14686996.2023.2183712 ↗
19. 10.1038/s41586‐024‐08212‐310.1038/s41586‐024‐08212‐3 ↗
20. 10.1038/s41467‐019‐08894‐810.1038/s41467‐019‐08894‐8 ↗
21. 10.1038/nrn263610.1038/nrn2636 ↗
22. 10.1016/j.neuron.2009.07.02910.1016/j.neuron.2009.07.029 ↗
23. 10.1016/j.neuron.2011.12.02310.1016/j.neuron.2011.12.023 ↗
24. 10.1016/j.neuron.2016.08.00610.1016/j.neuron.2016.08.006 ↗
25. 10.1038/s41467‐023‐40677‐010.1038/s41467‐023‐40677‐0 ↗
26. 10.1038/s41467‐018‐07052‐w10.1038/s41467‐018‐07052‐w ↗
27. 10.1209/0295‐5075/ac177a10.1209/0295‐5075/ac177a ↗
28. 10.1016/j.neucom.2004.01.02210.1016/j.neucom.2004.01.022 ↗
29. 10.1103/PhysRevE.107.03421610.1103/PhysRevE.107.034216 ↗
30. 10.1002/adma.20231147210.1002/adma.202311472 ↗
31. 10.1002/aelm.20200041010.1002/aelm.202000410 ↗
32. 10.1002/adma.20240367810.1002/adma.202403678 ↗
33. 10.1038/s41586‐025‐08733‐510.1038/s41586‐025‐08733‐5 ↗
34. 10.1002/smll.20240417710.1002/smll.202404177 ↗
35. 10.1002/advs.20230132310.1002/advs.202301323 ↗
36. 10.1021/acsnano.4c1776010.1021/acsnano.4c17760 ↗
37. 10.1038/s41928‐023‐01082‐z10.1038/s41928‐023‐01082‐z ↗
38. 10.1021/acsami.8b1576910.1021/acsami.8b15769 ↗
39. 10.1039/D1TC00655J10.1039/D1TC00655J ↗
40. 10.1002/adfm.20241237510.1002/adfm.202412375 ↗
41. 10.1016/j.mtener.2019.01.01010.1016/j.mtener.2019.01.010 ↗
42. 10.1016/j.neuron.2018.08.02210.1016/j.neuron.2018.08.022 ↗
43. 10.1063/5.013662710.1063/5.0136627 ↗
44. 10.1016/j.neucom.2021.09.00410.1016/j.neucom.2021.09.004 ↗
45. 10.1109/TCSII.2015.245637210.1109/TCSII.2015.2456372 ↗