High‐Mobility Sm‐Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling
Source abstract
Abstract
High-mobility (Smx Bi1-x )2 Se3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 10(19) cm(-3) and the mobility can reach about 7200 cm(2) V(-1) s(-1) with pronounced Shubnikov-de Haas oscillations.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Topological Materials and Phenomena · Advanced Condensed Matter Physics · Quantum many-body systems
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Collaborative Innovation Center of Advanced Microstructures National Laboratory of Solid State Microstructures Nanjing University Nanjing 210093 P. R. China
Department of Physics Nanjing University Nanjing 210093 P. R. China
School of Electronic Science and Engineering Nanjing University Nanjing 210093 P. R. China
Department of Electronics University of York York YO10 5DD UK
Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province Yancheng Institute of Technology Yancheng 224051 P. R. China
Diamond Light Source Didcot OX11 0DE UK
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