Memory Devices Based on Van der Waals Heterostructures
Source abstract
Abstract
With a rapid increase in artificial intelligence applications, massive data need to be processed in parallel and the performance of memories becomes the key factor that limits the efficiency of the whole system. High-performance memories that match the high-speed computing cell is needed, and architecture innovation is also urgent to solve the data transfer bottleneck of von Neumann architecture. Constructed by layered two-dimensional (2D) materials, van der Waals (vdW) heterostructures can be easily stacked and own diverse physical properties and band structures that provide a large space for the memory devices design. In this Perspective, we offer a perspective on the field of vdW heterostructures memory devices, including the device performance enhancement, the mechanism innovation, and the rich application scenarios.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · 2D Materials and Applications · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
School of Computer Science, Fudan University, Shanghai 200433, China
Funding
Ministry of Science and Technology of the People's Republic of China · Science and Technology Commission of Shanghai Municipality · National Natural Science Foundation of China · Shanghai Education Development Foundation · Shanghai Municipal Education Commission Shuguang Program
References (18)
Show source-provided references
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