journal article·2020-09-08

Memory Devices Based on Van der Waals Heterostructures

Chunsen Liu, Peng Zhou

ACS Materials Letters· Volume 2· Issue 9
Publisher page

Abstract

With a rapid increase in artificial intelligence applications, massive data need to be processed in parallel and the performance of memories becomes the key factor that limits the efficiency of the whole system. High-performance memories that match the high-speed computing cell is needed, and architecture innovation is also urgent to solve the data transfer bottleneck of von Neumann architecture. Constructed by layered two-dimensional (2D) materials, van der Waals (vdW) heterostructures can be easily stacked and own diverse physical properties and band structures that provide a large space for the memory devices design. In this Perspective, we offer a perspective on the field of vdW heterostructures memory devices, including the device performance enhancement, the mechanism innovation, and the rich application scenarios.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · 2D Materials and Applications · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China

School of Computer Science, Fudan University, Shanghai 200433, China

Funding

Ministry of Science and Technology of the People's Republic of China · Science and Technology Commission of Shanghai Municipality · National Natural Science Foundation of China · Shanghai Education Development Foundation · Shanghai Municipal Education Commission Shuguang Program

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