journal article·2024-01Open access

Electron Oscillation‐Induced Splitting Electroluminescence from Nano‐LEDs for Device‐Level Encryption

Kun Wang, Wenhao Li, Yitao Liao, Junlong Li, Rong Chen, Qi Chen, Bo Shi, Dae Hun Kim, Jae Hyeon Park, Yongai Zhang, Xiongtu Zhou, Chaoxing Wu, Zhiqiang Liu, Tailiang Guo, Tae Whan Kim

Advanced Materials· Volume 36· Issue 3

Abstract

Abstract Data security is a major concern in digital age, which generally relies on algorithm‐based mathematical encryption. Recently, encryption techniques based on physical principles are emerging and being developed, leading to the new generation of encryption moving from mathematics to the intersection of mathematics and physics. Here, device‐level encryption with ideal security is ingeniously achieved using modulation of the electron–hole radiative recombination in a GaN‐light‐emitting diode (LED). When a nano‐LED is driven in the non‐carrier injection mode, the oscillation of confined electrons can split what should be a single light pulse into multiple pulses. The morphology (amplitude, shape, and pulse number) of those history‐dependent multiple pulses that act as carriers for transmitted digital information depends highly on the parameters of the driving signals, which makes those signals mathematically uncrackable and can increase the volume and security of transmitted information. Moreover, a hardware and software platform are designed to demonstrate the encrypted data transmission based on the device‐level encryption method, enabling recognition of the entire ASCII code table. The device‐level encryption based on splitting electroluminescence provides an encryption method during the conversion process of digital signals to optical signals and can improve the security of LED‐based communication.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Advanced biosensing and bioanalysis techniques · Semiconductor Quantum Structures and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Physics and Information Engineering Fuzhou University Fuzhou 350108 China

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350108 China

Research and Development Center for Semiconductor Lighting Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

Department of Electronic and Computer Engineering Hanyang University Seoul 133‐791 South Korea

Funding

National Research Foundation of Korea

References (41)

Show source-provided references
1. 10.1038/s41586-018-0609-x10.1038/s41586-018-0609-x ↗
2. 10.1109/MNET.011.200022310.1109/MNET.011.2000223 ↗
3. 10.1109/TIFS.2020.298325010.1109/TIFS.2020.2983250 ↗
4. 10.1109/JIOT.2018.287551810.1109/JIOT.2018.2875518 ↗
5. 10.1109/JIOT.2020.304573310.1109/JIOT.2020.3045733 ↗
6. 10.1038/s41467-021-23527-910.1038/s41467-021-23527-9 ↗
7. 10.1126/science.107437610.1126/science.1074376 ↗
8. 10.1038/s41928-020-0372-510.1038/s41928-020-0372-5 ↗
9. 10.1038/s41467-021-27278-510.1038/s41467-021-27278-5 ↗
10. 10.1126/sciadv.170138410.1126/sciadv.1701384 ↗
11. 10.1515/nanoph-2020-004910.1515/nanoph-2020-0049 ↗
12. 10.1038/s41467-018-03251-710.1038/s41467-018-03251-7 ↗
13. 10.1021/acsphotonics.1c0130310.1021/acsphotonics.1c01303 ↗
14. 10.1021/acsnano.1c1010010.1021/acsnano.1c10100 ↗
15. 10.1038/ncomms200610.1038/ncomms2006 ↗
16. 10.1038/s41566-021-00873-010.1038/s41566-021-00873-0 ↗
17. 10.1038/s41586-018-0559-310.1038/s41586-018-0559-3 ↗
18. 10.1038/ncomms366110.1038/ncomms3661 ↗
19. Kim C. S. · Appl. Phys. Lett. · 2012 · 100
20. 10.1103/PhysRevB.82.08530510.1103/PhysRevB.82.085305 ↗
21. 10.1002/adma.20180137010.1002/adma.201801370 ↗
22. 10.1103/PhysRevLett.88.03680310.1103/PhysRevLett.88.036803 ↗
23. 10.1021/acsnano.1c0124210.1021/acsnano.1c01242 ↗
24. 10.1021/nl504582d10.1021/nl504582d ↗
25. 10.1109/JLT.2017.267286410.1109/JLT.2017.2672864 ↗
26. 10.1109/JPHOT.2016.259624510.1109/JPHOT.2016.2596245 ↗
27. 10.1109/MCOM.002.220010910.1109/MCOM.002.2200109 ↗
28. 10.1109/JLT.2017.276130110.1109/JLT.2017.2761301 ↗
29. 10.1109/JPHOT.2017.266740010.1109/JPHOT.2017.2667400 ↗
30. 10.1038/s41598-020-65092-z10.1038/s41598-020-65092-z ↗
31. 10.1109/TED.2021.313128910.1109/TED.2021.3131289 ↗
32. 10.1016/j.optlastec.2021.10704410.1016/j.optlastec.2021.107044 ↗
33. 10.1021/acs.jpclett.2c0287910.1021/acs.jpclett.2c02879 ↗
34. 10.3390/nano1206091210.3390/nano12060912 ↗
35. 10.1109/LED.2021.307751510.1109/LED.2021.3077515 ↗
36. 10.1016/j.nanoen.2020.10528110.1016/j.nanoen.2020.105281 ↗
37. 10.1021/acs.jpclett.1c0024810.1021/acs.jpclett.1c00248 ↗
38. 10.1063/5.007374110.1063/5.0073741 ↗
39. 10.1063/1.327606610.1063/1.3276066 ↗
40. 10.1016/j.optlaseng.2020.10629010.1016/j.optlaseng.2020.106290 ↗
41. 10.1109/JLT.2017.276130110.1109/JLT.2017.2761301 ↗