journal article·2024-12Open access

Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals

Chenyang Li, Fangyuan Zheng, Jiacheng Min, Ni Yang, Yu‐Ming Chang, Haomin Liu, Yuxiang Zhang, Pengfei Yang, Qinze Yu, Yu Li, Zhengtang Luo, Areej Aljarb, Kaimin Shih, Jing‐Kai Huang, Lain‐Jong Li, Yi Wan

Advanced Materials· Volume 36· Issue 51

Abstract

Abstract Epitaxial growth of 2D transition metal dichalcogenides (TMDCs) on sapphire substrates has been recognized as a pivotal method for producing wafer‐scale single‐crystal films. Both step‐edges and symmetry of substrate surfaces have been proposed as controlling factors. However, the underlying fundamental still remains elusive. In this work, through the molybdenum disulfide (MoS2) growth on C/M sapphire, it is demonstrated that controlling the sulfur evaporation rate is crucial for dictating the switch between atomic‐edge guided epitaxy and van der Waals epitaxy. Low‐concentration sulfur condition preserves O/Al‐terminated step edges, fostering atomic‐edge epitaxy, while high‐concentration sulfur leads to S‐terminated edges, preferring van der Waals epitaxy. These experiments reveal that on a 2 in. wafer, the van der Waals epitaxy mechanism achieves better control in MoS2 alignment (≈99%) compared to the step edge mechanism (<85%). These findings shed light on the nuanced role of atomic‐level thermodynamics in controlling nucleation modes of TMDCs, thereby providing a pathway for the precise fabrication of single‐crystal 2D materials on a wafer scale.
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Research context

OpenAlex topics: 2D Materials and Applications · ZnO doping and properties · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Mechanical Engineering The University of Hong Kong Hong Kong 999077 China

Department of Civil Engineering The University of Hong Kong Hong Kong 999077 China

Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong 999077 China

Department of Computer Science and Engineering The Chinese University of Hong Kong Hong Kong SAR 999077 China

The CUHK Shenzhen Research Institute Hi‐Tech Park Nanshan Shenzhen 518057 China

Department of Chemical and Biological Engineering The Hong Kong University of Science and Technology Hong Kong 999077 China

Physical Sciences and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Kingdom of Saudi Arabia

Department of Physics King Abdulaziz University Jeddah 21589 Kingdom of Saudi Arabia

Department of Systems Engineering City University of Hong Kong Hong Kong 999077 China

Funding

University of Hong Kong · University Grants Committee · University Research Committee, University of Hong Kong · Natural Science Foundation of Guangdong Province · Key Technologies Research and Development Program

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