journal article·2023-09Open access

NbTe4 Phase‐Change Material: Breaking the Phase‐Change Temperature Balance in 2D Van der Waals Transition‐Metal Binary Chalcogenide

Yi Shuang, Qian Chen, Mihyeon Kim, Yinli Wang, Yuta Saito, Shogo Hatayama, Paul Fons, Daisuke Ando, Momoji Kubo, Yuji Sutou

Advanced Materials· Volume 35· Issue 39

Abstract

Abstract 2D van der Waals (vdW) transition metal di‐chalcogenides (TMDs) have garnered significant attention in the nonvolatile memory field for their tunable electrical properties, scalability, and potential for phase engineering. However, their complex switching mechanism and complicated fabrication methods pose challenges for mass production. Sputtering is a promising technique for large‐area 2D vdW TMD fabrication, but the high melting point (typically Tm > 1000 °C) of TMDs requires elevated temperatures for good crystallinity. This study focuses on the low‐Tm 2D vdW TM tetra‐chalcogenides and identifies NbTe4 as a promising candidate with an ultra‐low Tm of around 447 °C (onset temperature). As‐grown NbTe4 forms an amorphous phase upon deposition that can be crystallized by annealing at temperatures above 272 °C. The simultaneous presence of a low Tm and a high crystallization temperature Tc can resolve important issues facing current phase‐change memory compounds, such as high Reset energies and poor thermal stability of the amorphous phase. Therefore, NbTe4 holds great promise as a potential solution to these issues.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Phase-change materials and chalcogenides · Advanced Thermoelectric Materials and Devices · Transition Metal Oxide Nanomaterials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

WPI Advanced Institute for Materials Research Tohoku University 2‐1‐1 Katahira, Aoba Sendai 980‐8577 Japan

New Industry Creation Hatchery Center Tohoku University 6‐6‐10 Aoba, Aramaki, Aoba‐ku Sendai 980‐8579 Japan

Institute for Materials Research Tohoku University 2‐1‐1 Katahira, Aoba‐ku Sendai 980‐8577 Japan

Department of Materials Science, Graduate School of Engineering Tohoku University 6‐6‐11 Aoba‐yama Sendai 980‐8579 Japan

Device Technology Research Institute National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Central 2, Umezono 1‐1‐1 Tsukuba 305‐8568 Japan

Department of Electronics and Electrical Engineering, Faculty of Science and Technology Keio University 3‐14‐1 Hiyoshi, Kohoku‐ku Yokohama Kanagawa 223‐8522 Japan

Funding

Japan Society for the Promotion of Science · Nippon Sheet Glass Foundation for Materials Science and Engineering

References (50)

Show source-provided references
1. 10.1002/admi.20190074110.1002/admi.201900741 ↗
2. 10.1038/nature2239110.1038/nature22391 ↗
3. 10.1038/nature2404310.1038/nature24043 ↗
4. 10.1038/nmat445210.1038/nmat4452 ↗
5. 10.1016/j.mattod.2016.10.00210.1016/j.mattod.2016.10.002 ↗
6. 10.1039/D1MH01772A10.1039/D1MH01772A ↗
7. 10.7567/APEX.8.09520110.7567/APEX.8.095201 ↗
8. Wang X. · Mater. Today · 2022 · 54 · 55
9. 10.1063/1.502224710.1063/1.5022247 ↗
10. 10.1063/5.012716010.1063/5.0127160 ↗
11. 10.1039/D2TC01281B10.1039/D2TC01281B ↗
12. 10.1038/s41563-018-0234-y10.1038/s41563-018-0234-y ↗
13. 10.1021/acs.nanolett.9b0527210.1021/acs.nanolett.9b05272 ↗
14. 10.1021/nl400888p10.1021/nl400888p ↗
15. 10.1021/acs.cgd.1c0150410.1021/acs.cgd.1c01504 ↗
16. 10.1021/acsanm.1c0150410.1021/acsanm.1c01504 ↗
17. 10.1002/adma.20160268710.1002/adma.201602687 ↗
18. 10.1016/j.mtphys.2020.10026610.1016/j.mtphys.2020.100266 ↗
19. 10.1021/acs.nanolett.5b0266110.1021/acs.nanolett.5b02661 ↗
20. 10.1007/s11669-019-00756-610.1007/s11669-019-00756-6 ↗
21. 10.1038/ncomms1048210.1038/ncomms10482 ↗
22. 10.1126/science.abi633210.1126/science.abi6332 ↗
23. 10.1021/acs.chemrev.2c0017110.1021/acs.chemrev.2c00171 ↗
24. 10.1246/bcsj.38.188110.1246/bcsj.38.1881 ↗
25. 10.1016/j.actamat.2011.10.04810.1016/j.actamat.2011.10.048 ↗
26. 10.1039/b820654f10.1039/b820654f ↗
27. 10.1038/s41598-018-24572-z10.1038/s41598-018-24572-z ↗
28. J. A.Galvis A.Fang D.Jiménez‐Guerrero J.Rojas‐Castillo J.Casas O.Herrera A. C.Garcia‐Castro E.Bousquet I. R.Fisher A.Kapitulnik P.Giraldo‐Gallo arXiv:2203.00079 2022.
29. 10.1116/1.503665410.1116/1.5036654 ↗
30. 10.1038/s41598-017-16283-810.1038/s41598-017-16283-8 ↗
31. 10.1016/j.vacuum.2021.11020510.1016/j.vacuum.2021.110205 ↗
32. 10.1021/acsami.9b1153510.1021/acsami.9b11535 ↗
33. 10.1016/j.actamat.2016.04.01710.1016/j.actamat.2016.04.017 ↗
34. 10.1038/nmat293410.1038/nmat2934 ↗
35. 10.1109/TED.2010.205877110.1109/TED.2010.2058771 ↗
36. 10.1021/acsami.2c1318910.1021/acsami.2c13189 ↗
37. 10.1103/PhysRevMaterials.5.08560110.1103/PhysRevMaterials.5.085601 ↗
38. 10.1039/C9TC02963J10.1039/C9TC02963J ↗
39. 10.1038/nmat121510.1038/nmat1215 ↗
40. 10.1063/1.280162610.1063/1.2801626 ↗
41. 10.1016/j.actamat.2015.02.01510.1016/j.actamat.2015.02.015 ↗
42. 10.1103/PhysRevB.97.19510510.1103/PhysRevB.97.195105 ↗
43. 10.1021/acs.inorgchem.1c0307910.1021/acs.inorgchem.1c03079 ↗
44. 10.1149/1.240425610.1149/1.2404256 ↗
45. 10.1002/pssb.1966015022410.1002/pssb.19660150224 ↗
46. 10.1103/PhysRevB.37.78510.1103/PhysRevB.37.785 ↗
47. 10.1103/PhysRevA.38.309810.1103/PhysRevA.38.3098 ↗
48. 10.1063/1.131601510.1063/1.1316015 ↗
49. 10.1063/1.45845210.1063/1.458452 ↗
50. 10.1103/PhysRevLett.102.07300510.1103/PhysRevLett.102.073005 ↗