Electrically Controlled All‐Antiferromagnetic Tunnel Junctions on Silicon with Large Room‐Temperature Magnetoresistance
Source abstract
Abstract
Abstract Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon‐based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon‐compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three‐terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3, sputter‐deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room‐temperature TMR effect. First‐principles calculations explain the TMR in terms of the momentum‐resolved spin‐dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Magnetic properties of thin films · Quantum and electron transport phenomena · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering Northwestern University Evanston IL 60208 USA
Applied Physics Program Northwestern University Evanston IL 60208 USA
Institute of Advanced Materials (INAM) Universitat Jaume I Castellón 12006 Spain
Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA
Department of Physics and Astronomy California State University Northridge Northridge CA 91330 USA
Materials Science Division Argonne National Laboratory Lemont IL 60439 USA
Department of Electrical and Information Engineering Politecnico di Bari Bari 70125 Italy
Department of Mathematical and Computer Sciences Physical Sciences and Earth Sciences University of Messina Messina 98166 Italy
Department of Chemistry Northwestern University Evanston IL 60208 USA
Funding
U.S. Department of Energy · Office of Science · Basic Energy Sciences
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