journal article·2021-11Open access

Electrical Generation and Deletion of Magnetic Skyrmion‐Bubbles via Vertical Current Injection

Seungmo Yang, Kyoung‐Woong Moon, Tae‐Seong Ju, Changsoo Kim, Hyun‐Joong Kim, Juran Kim, Bao Xuan Tran, Jung‐Il Hong, Chanyong Hwang

Advanced Materials· Volume 33· Issue 45

Abstract

Abstract The magnetic skyrmion is a topologically protected spin texture that has attracted much attention as a promising information carrier because of its distinct features of suitability for high‐density storage, low power consumption, and stability. One of the skyrmion devices proposed so far is the skyrmion racetrack memory, which is the skyrmion version of the domain‐wall racetrack memory. For application in devices, skyrmion racetrack memory requires electrical generation, deletion, and displacement of isolated skyrmions. Despite the progress in experimental demonstrations of skyrmion generation, deletion, and displacement, these three operations have yet to be realized in one device. Here, a route for generating and deleting isolated skyrmion‐bubbles through vertical current injection with an explanation of its microscopic origin is presented. By combining the proposed skyrmion‐bubble generation/deletion method with the spin–orbit‐torque‐driven skyrmion shift, a proof‐of‐concept experimental demonstration of the skyrmion racetrack memory operation in a three‐terminal device structure is provided.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Magnetic properties of thin films · Advanced Memory and Neural Computing · Characterization and Applications of Magnetic Nanoparticles

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Quantum Spin Team Korea Research Institute of Standards and Science Daejeon 34113 Republic of Korea

Department of Emerging Materials Science DGIST Daegu 42988 Republic of Korea

Funding

National Research Foundation of Korea

References (54)

Show source-provided references
1. 10.1103/PhysRevLett.87.03720310.1103/PhysRevLett.87.037203 ↗
2. 10.1038/nature0505610.1038/nature05056 ↗
3. 10.1126/science.116676710.1126/science.1166767 ↗
4. 10.1038/nature0912410.1038/nature09124 ↗
5. 10.1038/nnano.2013.24310.1038/nnano.2013.243 ↗
6. 10.1088/1361-6463/ab841810.1088/1361-6463/ab8418 ↗
7. 10.1021/acs.nanolett.7b0472210.1021/acs.nanolett.7b04722 ↗
8. 10.1038/srep0940010.1038/srep09400 ↗
9. 10.1038/s41928-020-0385-010.1038/s41928-020-0385-0 ↗
10. 10.1039/D0NA00009D10.1039/D0NA00009D ↗
11. 10.1088/1361-6528/aa7af510.1088/1361-6528/aa7af5 ↗
12. 10.1039/C7NR09722K10.1039/C7NR09722K ↗
13. 10.1103/PhysRevApplied.14.05402010.1103/PhysRevApplied.14.054020 ↗
14. 10.1063/1.511518310.1063/1.5115183 ↗
15. 10.1038/nnano.2013.2910.1038/nnano.2013.29 ↗
16. 10.1038/nnano.2013.21010.1038/nnano.2013.210 ↗
17. 10.1038/srep0678410.1038/srep06784 ↗
18. W.Kang X.Chen D.Zhu X.Zhang Y.Zhou K.Qiu Y.Zhang W.Zhaoin2018 IEEE 7th Non‐Volatile Memory Systems and Applications Symp. (NVMSA) IEEE Piscataway NJ2018 pp.7–12 https://doi.org/10.1109/NVMSA.2018.00009;10.1109/NVMSA.2018.00009 ↗
19. 10.1038/natrevmats.2017.3110.1038/natrevmats.2017.31 ↗
20. 10.1088/1361-648X/ab548810.1088/1361-648X/ab5488 ↗
21. 10.1038/nmat459310.1038/nmat4593 ↗
22. 10.1126/science.aaa144210.1126/science.aaa1442 ↗
23. 10.1038/nnano.2015.31310.1038/nnano.2015.313 ↗
24. 10.1021/acs.nanolett.5b0525710.1021/acs.nanolett.5b05257 ↗
25. 10.1038/nnano.2017.17810.1038/nnano.2017.178 ↗
26. 10.1038/s41928-018-0070-810.1038/s41928-018-0070-8 ↗
27. 10.1021/acs.nanolett.7b0064910.1021/acs.nanolett.7b00649 ↗
28. 10.1038/ncomms1557310.1038/ncomms15573 ↗
29. 10.1038/ncomms1576510.1038/ncomms15765 ↗
30. 10.1021/acs.nanolett.9b0284010.1021/acs.nanolett.9b02840 ↗
31. 10.1038/nnano.2016.23410.1038/nnano.2016.234 ↗
32. 10.1021/acs.nanolett.7b0032810.1021/acs.nanolett.7b00328 ↗
33. 10.1021/acs.nanolett.8b0150210.1021/acs.nanolett.8b01502 ↗
34. 10.1038/s41928-020-0432-x10.1038/s41928-020-0432-x ↗
35. 10.1021/acs.nanolett.8b0365310.1021/acs.nanolett.8b03653 ↗
36. 10.1038/s41928-020-00489-210.1038/s41928-020-00489-2 ↗
37. 10.1038/nphys388310.1038/nphys3883 ↗
38. 10.1038/nphys400010.1038/nphys4000 ↗
39. 10.1038/s41467-019-13182-610.1038/s41467-019-13182-6 ↗
40. 10.1038/s41565-018-0345-210.1038/s41565-018-0345-2 ↗
41. 10.1038/ncomms1029310.1038/ncomms10293 ↗
42. 10.1021/acs.nanolett.6b0401010.1021/acs.nanolett.6b04010 ↗
43. 10.1109/JPROC.2020.297571910.1109/JPROC.2020.2975719 ↗
44. 10.1038/nmat280410.1038/nmat2804 ↗
45. 10.1103/PhysRevB.94.10443110.1103/PhysRevB.94.104431 ↗
46. 10.1038/s42254-020-0203-710.1038/s42254-020-0203-7 ↗
47. 10.1063/1.489918610.1063/1.4899186 ↗
48. 10.1038/s41928-019-0359-210.1038/s41928-019-0359-2 ↗
49. 10.1103/PhysRevB.94.02040210.1103/PhysRevB.94.020402 ↗
50. 10.1038/s41598-021-87742-610.1038/s41598-021-87742-6 ↗
51. 10.1038/s41598-018-21623-310.1038/s41598-018-21623-3 ↗
52. 10.1038/s41563-019-0468-310.1038/s41563-019-0468-3 ↗
53. 10.1021/acs.nanolett.7b0440010.1021/acs.nanolett.7b04400 ↗
54. 10.1038/nnano.2016.8410.1038/nnano.2016.84 ↗