Low‐Power and Field‐Free Perpendicular Magnetic Memory Driven by Topological Insulators
Source abstract
Abstract
Abstract Giant spin–orbit torque (SOT) from topological insulators (TIs) has great potential for low‐power SOT‐driven magnetic random‐access memory (SOT‐MRAM). In this work, a functional 3‐terminal SOT‐MRAM device is demonstrated by integrating the TI [(BiSb)2Te3] with perpendicular magnetic tunnel junctions (pMTJs), where the tunneling magnetoresistance is employed for the effective reading method. An ultralow switching current density of 1.5 × 105 A cm−2 is achieved in the TI‐pMTJ device at room temperature, which is 1–2 orders of magnitude lower than that in conventional heavy–metals‐based systems, due to the high SOT efficiency θSH = 1.16 of (BiSb)2Te3. Furthermore, all‐electrical field‐free writing is realized by the synergistic effect of a small spin‐transfer torque current during the SOT. The thermal stability factor (Δ = 66) shows the high retention time (>10 years) of the TI‐pMTJ device. This work sheds light to the future low‐power, high‐density, and high‐endurance/retention magnetic memory technology based on quantum materials.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Magnetic properties of thin films · Topological Materials and Phenomena · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Songshan Lake Materials Laboratory Dongguan Guangdong 523808 China
Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China
Physical Science and Engineering Division King Abdullah University of Science and Technology Thuwal 23955–6900 Saudi Arabia
School of Electronic Science and Engineering and State Key Laboratory of Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China
Department of Electrical and Computer Engineering University of California, Los Angeles Los Angeles CA 90095 USA
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China · Army Research Office · King Abdullah University of Science and Technology
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