Bridging to Commercialization: Record‐Breaking of Ultra‐Large and Superior Cyclic Stability Tungsten Oxide Electrochromic Smart Window
Source abstract
Abstract
Abstract Electrochromic smart windows (ESWs) can significantly reduce energy consumption in buildings, but their cost‐effective, large‐scale production remains a challenge. In this study, the instability of black phosphorus is leveraged to induce the growth of the tungsten oxide film through its decomposition process, inspired by the 2D material‐assisted in situ growth (TAIG) method. This approach results in the preparation of large‐scale, high‐performance WO3‐x·nH2O (n < 2) films. Characterization techniques and DFT calculations confirm efficient regulation of structural water and oxygen vacancies during TAIG preparation. The WO3‐x·nH2O films exhibit excellent electrochromic (EC) properties, including high transmittance modulation (74.2%@1100 nm), fast switching time (tc = 5.5 s, tb = 3.8 s), high coloration efficiency (124.7 cm2 C−1), and superior cyclic stability (transmittance modulation retained 94.7% after 20 000 cycles). Ultra‐large WO3‐x·nH2O film are prepared via a simple immersion process, and fabricated into a large‐area ESW under facile laboratory conditions, demonstrating the economic and practical feasibility of this approach in industrial‐scale production. Operated by the intelligent control circuit, the ESW exhibits remarkable EC properties and cyclic stability This research represents a milestone in improving the performance and industrial‐scale production of ESWs, bridging the gap to the commercialization of EC technology.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Transition Metal Oxide Nanomaterials · Gas Sensing Nanomaterials and Sensors · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Materials and Metallurgy Guizhou University Guiyang 550025 China
State Key Laboratory of Electronic Thin Films and Integrated Devices National Engineering Research Center of Electromagnetic Radiation Control Materials School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 PR China
Funding
National Natural Science Foundation of China · China Postdoctoral Science Foundation
References (54)
Show source-provided references
1. 10.1016/j.rser.2022.11301310.1016/j.rser.2022.113013 ↗
2. 10.1016/j.jclepro.2021.12685410.1016/j.jclepro.2021.126854 ↗
3. 10.1016/j.xcrp.2023.10137010.1016/j.xcrp.2023.101370 ↗
4. 10.1002/advs.20230722310.1002/advs.202307223 ↗
5. 10.1002/adfm.20230898910.1002/adfm.202308989 ↗
6. 10.1016/j.jechem.2023.09.01410.1016/j.jechem.2023.09.014 ↗
7. 10.1016/j.rser.2023.11335510.1016/j.rser.2023.113355 ↗
8. 10.1002/adma.20240349910.1002/adma.202403499 ↗
9. 10.1002/adfm.20240076010.1002/adfm.202400760 ↗
10. 10.1016/j.cej.2023.14809810.1016/j.cej.2023.148098 ↗
11. 10.1016/j.electacta.2023.14364410.1016/j.electacta.2023.143644 ↗
12. 10.1002/admt.20200083610.1002/admt.202000836 ↗
13. 10.1016/j.jechem.2024.03.02910.1016/j.jechem.2024.03.029 ↗
14. 10.1016/j.cej.2021.13030610.1016/j.cej.2021.130306 ↗
15. 10.1002/smtd.20230085010.1002/smtd.202300850 ↗
16. 10.1021/acsaelm.3c0107910.1021/acsaelm.3c01079 ↗
17. 10.1016/j.chempr.2017.12.03010.1016/j.chempr.2017.12.030 ↗
18. 10.1016/j.jechem.2022.10.04710.1016/j.jechem.2022.10.047 ↗
19. 10.1016/j.pmatsci.2017.04.00310.1016/j.pmatsci.2017.04.003 ↗
20. 10.1039/D2NR04761F10.1039/D2NR04761F ↗
21. 10.1016/j.optmat.2023.11442110.1016/j.optmat.2023.114421 ↗
22. 10.1016/j.cej.2021.13038310.1016/j.cej.2021.130383 ↗
23. 10.1016/j.solidstatesciences.2022.10699010.1016/j.solidstatesciences.2022.106990 ↗
24. 10.3390/coatings1311187910.3390/coatings13111879 ↗
25. 10.3390/nano1005082110.3390/nano10050821 ↗
26. Dutta P. · ACS Appl. Mater. Interfaces · 2023 · 15
27. 10.1021/acssuschemeng.1c0622810.1021/acssuschemeng.1c06228 ↗
28. 10.1007/s10854-017-6805-x10.1007/s10854-017-6805-x ↗
29. 10.1021/acsami.7b0865610.1021/acsami.7b08656 ↗
30. 10.1039/D3TA06768H10.1039/D3TA06768H ↗
31. 10.1021/acsnano.8b0374010.1021/acsnano.8b03740 ↗
32. 10.1021/acsami.9b1996110.1021/acsami.9b19961 ↗
33. 10.1016/j.electacta.2018.08.00910.1016/j.electacta.2018.08.009 ↗
34. Wang Z. · ACS Appl. Mater. Interfaces · 2021 · 9
35. 10.1016/j.inoche.2023.11191210.1016/j.inoche.2023.111912 ↗
36. 10.1016/j.ijhydene.2023.12.06710.1016/j.ijhydene.2023.12.067 ↗
37. 10.1021/acs.nanolett.8b0209210.1021/acs.nanolett.8b02092 ↗
38. 10.1039/C9NR01059A10.1039/C9NR01059A ↗
39. 10.1016/j.solmat.2022.11189210.1016/j.solmat.2022.111892 ↗
40. 10.1016/j.apcatb.2023.12368210.1016/j.apcatb.2023.123682 ↗
41. 10.1016/j.apcatb.2022.12220210.1016/j.apcatb.2022.122202 ↗
42. 10.1039/D0TA10803K10.1039/D0TA10803K ↗
43. 10.1016/j.apsusc.2022.15242410.1016/j.apsusc.2022.152424 ↗
44. 10.1016/j.electacta.2015.08.06910.1016/j.electacta.2015.08.069 ↗
45. 10.1039/C5CP02482J10.1039/C5CP02482J ↗
46. 10.1002/adom.20220277410.1002/adom.202202774 ↗
47. 10.1002/smll.20200470910.1002/smll.202004709 ↗
48. 10.1021/acsnano.8b0227310.1021/acsnano.8b02273 ↗
49. 10.1002/aenm.20240260310.1002/aenm.202402603 ↗
50. 10.1039/C7TA09579A10.1039/C7TA09579A ↗
51. 10.1039/D2MH01472F10.1039/D2MH01472F ↗
52. 10.1016/j.cej.2023.14366610.1016/j.cej.2023.143666 ↗
53. 10.1002/smsc.20230021910.1002/smsc.202300219 ↗
54. 10.1016/j.solmat.2004.02.01910.1016/j.solmat.2004.02.019 ↗