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journal article·2024-01Open access

Highly Reliable Van Der Waals Memory Boosted by a Single 2D Charge Trap Medium

Chao Liu, Jie Pan, Qihui Yuan, Chao Zhu, Jianquan Liu, Feixiang Ge, Jijie Zhu, Haitao Xie, Dawei Zhou, Zicheng Zhang, Peiyi Zhao, Bobo Tian, Wei Huang, Lin Wang

Advanced Materials· Volume 36· Issue 3
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Source abstract

Abstract

Abstract Charge trap materials that can store carriers efficiently and controllably are desired for memory applications. 2D materials are promising for highly compacted and reliable memory mainly due to their ease of constructing atomically uniform interfaces, however, remain unexplored as being charge trap media. Here it is discovered that 2D semiconducting PbI2 is an excellent charge trap material for nonvolatile memory and artificial synapses. It is simple to construct PbI2‐based charge trap devices since no complicated synthesis or additional defect manufacturing are required. As a demonstration, MoS2/PbI2 device exhibits a large memory window of 120 V, fast write speed of 5 µs, high on‐off ratio around 106, multilevel memory of over 8 distinct states, high reliability with endurance up to 104 cycles and retention over 1.2 × 104 s. It is envisioned that PbI2 with ionic activity caused by the natively formed iodine vacancies is unique to combine with unlimited 2D materials for versatile van der Waals devices with high‐integration and multifunctionality.
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Research context

Nanomaterials

OpenAlex topics: 2D Materials and Applications · Quantum and electron transport phenomena · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM) Key Laboratory of Flexible Electronics (KLOFE) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University (Nanjing Tech) Nanjing 211816 China

SEU‐FEI Nano‐Pico Center Key Lab of MEMS of Ministry of Education School of Electronic Science and Engineering Southeast University Nanjing 210096 China

Key Laboratory of Polar Materials and Devices Ministry of Education Shanghai Center of Brain‐inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai 200241 China

Frontiers Science Center for Flexible Electronics (FSCFE) Key Laboratory of Flexible Electronics (KLOFE) Shaanxi Institute of Flexible Electronics (SIFE) Institute of Flexible Electronics (IFE) North‐Western Polytechnical University (NPU) Xi'an 710072 China

School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies Sun Yat‐sen University Guangdong 518107 China

State Key Laboratory of Organic Electronics and Information Displays Nanjing University of Posts and Telecommunications Nanjing 210023 China

Funding

National Natural Science Foundation of China

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