Defect‐Engineered Dzyaloshinskii–Moriya Interaction and Electric‐Field‐Switchable Topological Spin Texture in SrRuO₃

Jingdi Lu; Liang Si; Qinghua Zhang; Chengfeng Tian; Xin Liu; Chuangye Song; Shouzhe Dong; Jie Wang; Sheng Cheng; Lili Qu; Kexuan Zhang; Youguo Shi; Houbing Huang; Tao Zhu; Wenbo Mi; Zhicheng Zhong; Lin Gu; Karsten Held; Lingfei Wang; Jinxing Zhang

doi:10.1002/adma.202102525

journal article·2021-08Open access

Defect‐Engineered Dzyaloshinskii–Moriya Interaction and Electric‐Field‐Switchable Topological Spin Texture in SrRuO₃

Jingdi Lu, Liang Si, Qinghua Zhang, Chengfeng Tian, Xin Liu, Chuangye Song, Shouzhe Dong, Jie Wang, Sheng Cheng, Lili Qu, Kexuan Zhang, Youguo Shi, Houbing Huang, Tao Zhu, Wenbo Mi, Zhicheng Zhong, Lin Gu, Karsten Held, Lingfei Wang, Jinxing Zhang

Advanced Materials· Volume 33· Issue 33

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Source abstract

Abstract

Abstract In situ electrical control of the Dzyaloshinskii–Moriya interaction (DMI) is one of the central but challenging goals toward skyrmion‐based device applications. An atomic design of defective interfaces in spin–orbit‐coupled transition‐metal oxides can be an appealing strategy to achieve this goal. In this work, by utilizing the distinct formation energies and diffusion barriers of oxygen vacancies at SrRuO₃/SrTiO₃(001), a sharp interface is constructed between oxygen‐deficient and stoichiometric SrRuO₃. This interfacial inversion‐symmetry breaking leads to a sizable DMI, which can induce skyrmionic magnetic bubbles and the topological Hall effect in a more than 10 unit‐cell‐thick SrRuO₃. This topological spin texture can be reversibly manipulated through the migration of oxygen vacancies under electric gating. In particular, the topological Hall signal can be deterministically switched ON and OFF. This result implies that the defect‐engineered topological spin textures may offer an alternate perspective for future skyrmion‐based memristor and synaptic devices.

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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Magnetic properties of thin films · Advanced Condensed Matter Physics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics Beijing Normal University Beijing 100875 China

Institut für Festkörperphysik TU Wien Wiedner Hauptstraße 8–10 Vienna 1040 Austria

Key Laboratory of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Science Beijing 100190 China

School of Materials Science and Engineering and Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology Beijing 100081 China

Spallation Neutron Source Science Center Dongguan 523803 China

Hefei National Laboratory for Physical Sciences at Microscale University of Science and Technology of China Hefei 230026 China

Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology School of Science Tianjin University Tianjin 300354 China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China · Natural Science Foundation of Beijing Municipality · Fundamental Research Funds for the Central Universities · Austrian Science Fund

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