Resistive Switching Crossbar Arrays Based on Layered Materials
Source abstract
Abstract
Abstract Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>108 devices mm−2) and this can be further enhanced by stacking them three‐dimensionally. The advantage of using layered materials (LMs) in RS devices compared to traditional phase‐change materials and metal oxides is that their electrical properties can be adjusted with a higher precision. Here, the key figures‐of‐merit and procedures to implement LM‐based RS devices are defined. LM‐based RS devices fabricated using methods compatible with industry are identified and discussed. The focus is on small devices (size < 9 µm2) arranged in crossbar structures, since larger devices may be affected by artifacts, such as grain boundaries and flake junctions. How to enhance device performance, so to accelerate the development of this technology, is also discussed.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Physical Sciences and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia
School of Materials Science and Engineering The Key Laboratory of Material Processing and Mold of the Ministry of Education Henan Key Laboratory of Advanced Nylon Materials and Application Zhengzhou University Zhengzhou 450001 P. R. China
Cambridge Graphene Centre University of Cambridge Cambridge CB3 0FA UK
Funding
King Abdullah University of Science and Technology · Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Priority Academic Program Development of Jiangsu Higher Education Institutions · European Research Council · Engineering and Physical Sciences Research Council
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