Compensating Poly(3‐hexylthiophene) Reveals Its Doping Density and Its Strong Exciton Quenching by Free Carriers
Source abstract
Abstract
Adding increasing quantities of an n-type compensating dopant, cobaltocene, to poly(3-hexylthiophene) reveals an almost perfect mirror symmetry between the conductivity and the luminescence intensity. The sharp minimum/maximum shows that the uncompensated p-type doping density is 1.2 × 10(18) cm(-3) and that excitons are strongly quenched by free charge carriers, not by bound charges.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Advanced Memory and Neural Computing
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References (44)
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