Interface Engineering in Solution‐Processed Nanocrystal Thin Films for Improved Thermoelectric Performance

Solution-processed PbTe nanocrystal (NC) thin films are ligand exchanged by ethylenediamine and then annealed at 400 °C for enhancement of NC coupling. To further improve the performance, heterostructures are introduced into the PbTe/PbS films. Significantly, an optimized ZT of ≈0.30 is successfully achieved at 405 K. This method opens an avenue toward thermoelectric thin film devices with high performance. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.