DataVXAdvanced MaterialsPaper
journal article·2018-07Open access

Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy

Shishun Zhao, Lei Wang, Ziyao Zhou, Chunlei Li, Guohua Dong, Le Zhang, Bin Peng, Tai Min, Zhongqiang Hu, Jing Ma, Wei Ren, Zuo‐Guang Ye, Wei Chen, Pu Yu, Ce‐Wen Nan, Ming Liu

Advanced Materials· Volume 30· Issue 30
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Source abstract

Abstract

Abstract Electric field (E‐field) modulation of perpendicular magnetic anisotropy (PMA) switching, in an energy‐efficient manner, is of great potential to realize magnetoelectric (ME) memories and other ME devices. Voltage control of the spin‐reorientation transition (SRT) that allows the magnetic moment rotating between the out‐of‐plane and the in‐plane direction is thereby crucial. In this work, a remarkable magnetic anisotropy field change up to 1572 Oe is achieved under a small operation voltage of 4 V through ionic liquid (IL) gating control of SRT in Au/[DEME]+[TFSI]−/Pt/(Co/Pt)2/Ta capacitor heterostructures at room temperature, corresponding to a large ME coefficient of 378 Oe V−1. As revealed by both ferromagnetic resonance measurements and magnetic domain evolution observation, the magnetization can be switched stably and reversibly between the out‐of‐plane and in‐plane directions via IL gating. The key mechanism, revealed by the first‐principles calculation, is that the IL gating process influences the interfacial spin–orbital coupling as well as net Rashba magnetic field between the Co and Pt layers, resulting in the modulation of the SRT and in‐plane/out‐of‐plane magnetization switching. This work demonstrates a unique IL‐gated PMA with large ME tunability and paves a way toward IL gating spintronic/electronic devices such as voltage tunable PMA memories.
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Research context

OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Multiferroics and related materials · Electronic and Structural Properties of Oxides

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Affiliations

Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education and International Center for Dielectric Research School of Electronic and Information Engineering Xi'an Jiaotong University Xi'an 710049 China

Center for Spintronics and Quantum System State Key Laboratory for Mechanical Behavior of Materials School of Materials Science and Engineering Xi'an Jiaotong University Xi'an 710049 China

State Key Laboratory of New Ceramics and Fine Processing and School of Materials Science and Engineering Tsinghua University Beijing 100084 China

Department of Chemistry and 4D LABS Simon Fraser University Burnaby British Columbia V5A 1S5 Canada

Materials Science Division Argonne National Laboratory 9700 Cass Avenue Lemont IL 60439 USA

Institute for Molecular Engineering The University of Chicago 5640 South Ellis Avenue Chicago IL 60637 USA

State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua University Beijing 100084 China

Funding

National Natural Science Foundation of China · Natural Sciences and Engineering Research Council of Canada · U.S. Department of Energy

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