Nanoscale Transformations in Metastable, Amorphous, Silicon‐Rich Silica
Source abstract
Abstract
Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and ultimately, emission of superoxide ions. Results from this fundamental study are directly relevant to materials that are increasingly used in a range of technologies, and demonstrate a surprising level of field-driven local reordering of a random oxide network.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Advanced Memory and Neural Computing · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronic and Electrical Engineering UCL Torrington Place London WC1E 7JE UK
Institute of Materials Research and Engineering 2 Fusionopolis Way Singapore 138634
Department of Physics and Astronomy and London Centre for Nanotechnology UCL Gower Street London WC1E 6BT UK
Department of Materials Imperial College London South Kensington Campus London SW7 2AZ UK
Funding
Engineering and Physical Sciences Research Council
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