DataVXAdvanced MaterialsPaper
journal article·2021-08Open access

Ultrathin and Ultrasensitive Direct X‐ray Detector Based on Heterojunction Phototransistors

Yuanhong Gao, Yongshuai Ge, Xinwei Wang, Jin Liu, Wenquan Liu, Yong Cao, Kaichen Gu, Zheng Guo, Yu‐Ming Wei, Ni Zhou, De Yu, Hong Meng, Xue‐Feng Yu, Hairong Zheng, Wei Huang, Jia Li

Advanced Materials· Volume 33· Issue 32
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Source abstract

Abstract

Abstract Most contemporary X‐ray detectors adopt device structures with non/low‐gain energy conversion, such that a fairly thick X‐ray photoconductor or scintillator is required to generate sufficient X‐ray‐induced charges, and thus numerous merits for thin devices, such as mechanical flexibility and high spatial resolution, have to be compromised. This dilemma is overcome by adopting a new high‐gain device concept of a heterojunction X‐ray phototransistor. In contrast to conventional detectors, X‐ray phototransistors allow both electrical gating and photodoping for effective carrier‐density modulation, leading to high photoconductive gain and low noise. As a result, ultrahigh sensitivities of over 105 μC Gyair−1 cm−2 with low detection limit are achieved by just using an ≈50 nm thin photoconductor. The employment of ultrathin photoconductors also endows the detectors with superior flexibility and high imaging resolution. This concept offers great promise in realizing well‐balanced detection performance, mechanical flexibility, integration, and cost for next‐generation X‐ray detectors.
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Research context

OpenAlex topics: Radiation Detection and Scintillator Technologies · Advanced Semiconductor Detectors and Materials · Atomic and Subatomic Physics Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Materials Interfaces Center Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 P. R. China

Paul C. Lauterbur Research Center for Biomedical Imaging Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 P. R. China

Center for Medical Artificial Intelligence Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 P. R. China

School of Advanced Materials Shenzhen Graduate School Peking University Shenzhen 518055 P. R. China

State Key Laboratory of Optoelectronic Materials and Technologies School of Physics Sun Tat‐sen University Guangzhou 510275 P. R. China

Center for Opto‐Electronic Engineering and Technology Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 P. R. China

Department of Chemical and Biological Engineering Princeton University Princeton NJ 08544 USA

Frontiers Science Center for Flexible Electronics Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering Northwestern Polytechnical University 127 West Youyi Road Xi'an 710072 P. R. China

State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM) Nanjing University of Posts & Telecommunications 9 Wenyuan Road Nanjing 210023 P. R. China

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Nanjing Tech University (NanjingTech) South Puzhu Road Nanjing 211816 P. R. China

Funding

National Natural Science Foundation of China · Shenzhen Peacock Plan · U.S. Department of Energy · Brookhaven National Laboratory

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