Remarkable and Crystal‐Structure‐Dependent Piezoelectric and Piezoresistive Effects of InAs Nanowires

The piezoelectric and piezoresistive effects of InAs nanowires are experimentally demonstrated for the first time and are observed to strongly depend on the NW crystal structure. While single-crystalline 〈0001〉 oriented wurtzite nano­wires exhibit remarkable piezoelectric and piezoresistive effects, they are negligible in single-crystalline wurtzite , zinc blende 〈011〉, 〈103〉, oriented nanowires, and significantly suppressed by the presence of stacking faults. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.