Temperature Dependence of the Piezotronic and Piezophototronic Effects in a‐axis GaN Nanobelts
Source abstract
Abstract
The temperature dependence of the piezotronic and piezophototronic effects in a-axis GaN nanobelts from 77 to 300 K is investigated. The piezotronic effect is enhanced by over 440% under lower temperatures. Two independent processes are discovered to form a competing mechanism through the investigation of the temperature dependence of the piezophototronic effect in a-axis GaN nanobelts. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Thermal properties of materials · Thermal Radiation and Cooling Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332‐0245 USA
Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices South China Normal University Guangzhou 510631 China
Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 China
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