Substantial P‐Type Conductivity of AlN Achieved via Beryllium Doping

Abstract Beryllium has long been predicted by first principle theory as the best p‐type dopant for GaN and AlN. But experimental validation of these theories has not, until now, borne out the original predictions. A key challenge is the dopant‐induced strain leading to Be rejection from substitutional sites in favor of interstitial sites, leading to self‐compensation. More flexible growth methods like metal modulated epitaxy (MME) that can operate at substantially lower temperatures than traditional approaches, can more effectively place Be into the proper substitutional lattice sites. MME grown Be‐doped AlN shows substantial p‐type conductivity with hole concentrations in the range of 2.3 × 10¹⁵–3.1 × 10¹⁸ cm⁻³ at room temperature. While others have achieved sizable carrier concentrations near surfaces via carbon doping or Si implantation, this is the only known demonstration of substantial bulk p‐type doping in AlN and is a nearly 1000 times higher carrier concentration than the best previously demonstrated bulk electron concentrations in AlN. The acceptor activation energy is found to be ≈37 meV, ≈8 times lower than predicted in literature but on par with similar results for MME p‐type GaN. Preliminary results suggest that the films are highly compensated. A p‐AlN:Be/i‐GaN:Be/n‐GaN:Ge pin diode is demonstrated with substantial rectification.