journal article·2014-11

Band‐Selective Infrared Photodetectors with Complete‐Composition‐Range InAsxP1‐x Alloy Nanowires

Pinyun Ren, Wei Hu, Qinglin Zhang, Xiaoli Zhu, Xiujuan Zhuang, Liang Ma, Xiaopeng Fan, Hong Zhou, Lei Liao, Xiangfeng Duan, Anlian Pan

Advanced Materials· Volume 26· Issue 44
Publisher page

Abstract

Band-selective infrared photodetectors (PDs) are constructed with InAs(x)P(1-x) alloy nanowires from the complete composition range (0 ≤ x ≤ 1) achieved by a new growth route combining the vapor-liquid-solid mechanism with an additional ion-exchange process. Increasing the composition x value from 0 to 1 in the PDs allows the peak response wavelength to be gradually tuned from ca. 900 to ca. 2900 nm.
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Research context

OpenAlex topics: Nanowire Synthesis and Applications · Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory for Micro‐Nano Physics and Technology of Hunan Province, and State Key Laboratory of Chemo/Biosensing and Chemometrics Hunan University Changsha Hunan 410082 P. R. China

Department of Physics and Key Laboratory of Artificial Micro‐ and Nano‐structures of the Ministry of Education Wuhan University Wuhan Hubei 430072 P. R. China

Department of Chemistry and Biochemistry and California NanoSystems Institute University of California at Los Angeles Los Angeles CA 90095 USA

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