journal article·2014-03Open access

Room Temperature Formation of High‐Mobility Two‐Dimensional Electron Gases at Crystalline Complex Oxide Interfaces

Y. Z. Chen, N. Bovet, T. Kasama, W. W. Gao, S. Yazdi, C. Ma, N. Pryds, S. Linderoth

Advanced Materials· Volume 26· Issue 9

Abstract

Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2 -terminated SrTiO3 single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V(-1) s(-1) are achieved at this novel oxide interface.
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Magnetic and transport properties of perovskites and related materials · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Energy Conversion and Storage Technical University of Denmark Risø Campus 4000 Roskilde Denmark

Nano‐Science Center, Department of Chemistry University of Copenhagen 2100 Copenhagen Denmark

Center for Electron Nanoscopy Technical University of Denmark 2800 Lyngby Denmark

Beijing National Laboratory for Condensed, Matter Physics & Institute of Physics, Chinese Academy of Sciences 100190 Beijing China

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