Oxide Resistive Memory with Functionalized Graphene as Built‐in Selector Element
Source abstract
Abstract
A resistive memory with graphene electrodes is demonstrated. The spontaneous functionalization of graphene during device fabrication results in insulator-metal transition-like volatile threshold switching, creating a 1 selector – 1 resistor (1S1R) structure with a built-in selector and leading to a desirable highly nonlinear on-state behavior of the oxide resistive memory.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · CCD and CMOS Imaging Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor Michigan 48109
References (49)
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