Achieving Surface Quantum Oscillations in Topological Insulator Thin Films of Bi2Se3
Source abstract
Abstract
High-quality thin films of topological insulator Bi2Se3 grown on sapphire substrates present a long phase coherence length and allow direct observations of surface quantum oscillations. The key to achieving high mobility of surface electrons is to raise the main deposition temperature to 300−320 °C, which necessitates a two-step deposition procedure with the initial epilayer deposited at 110−130 °C.
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Research context
OpenAlex topics: Topological Materials and Phenomena · Graphene research and applications · Quantum and electron transport phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (31)
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