Flexible GaN Light‐Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots
Source abstract
Abstract
The epitaxial lateral overgrowth (ELOG) of GaN microdisks on graphene microdots and the fabrication of flexible light-emitting diodes (LEDs) using these microdisks is reported. An ELOG technique with only patterned graphene microdots is used, without any growth mask. The discrete micro-LED arrays are transferred onto Cu foil by a simple lift-off technique, which works reliably under various bending conditions.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics and Astronomy Institute of Applied Physics, and Research Institute of Advanced Materials Seoul National University Seoul 151‐747 Korea
Department of Materials Science and Engineering Research Institute of Advanced Materials Seoul National University Seoul 151‐744 Korea
Department of Chemistry and Nano Science Ewha Womans University Seoul 120‐750 Korea
Funding
Ministry of Science, ICT and Future Planning · Yonsei University
References (35)
Show source-provided references
1. 10.1038/nmat249310.1038/nmat2493 ↗
2. 10.1126/science.118238310.1126/science.1182383 ↗
3. 10.1126/science.123243710.1126/science.1232437 ↗
4. 10.1007/s10853-015-9643-310.1007/s10853-015-9643-3 ↗
5. 10.1038/357477a010.1038/357477a0 ↗
6. 10.1038/nature0249810.1038/nature02498 ↗
7. 10.1038/nmat245910.1038/nmat2459 ↗
8. 10.1063/1.9894610.1063/1.98946 ↗
9. 10.1063/1.11747310.1063/1.117473 ↗
10. 10.1126/science.119540310.1126/science.1195403 ↗
11. 10.1038/nature1097010.1038/nature10970 ↗
12. 10.1002/adma.20120138610.1002/adma.201201386 ↗
13. 10.1038/386351a010.1038/386351a0 ↗
14. 10.1038/nature0127710.1038/nature01277 ↗
15. 10.1038/nphoton.2009.3210.1038/nphoton.2009.32 ↗
16. 10.1016/j.nantod.2009.06.01010.1016/j.nantod.2009.06.010 ↗
17. 10.1002/adma.20110240710.1002/adma.201102407 ↗
18. 10.1002/smll.20100116810.1002/smll.201001168 ↗
19. 10.1016/j.snb.2010.12.03310.1016/j.snb.2010.12.033 ↗
20. 10.1063/1.482753910.1063/1.4827539 ↗
21. 10.1002/pssr.20130801010.1002/pssr.201308010 ↗
22. 10.1038/am.2012.4510.1038/am.2012.45 ↗
23. Yoo H. · Appl. Phys. Lett. · 2013 · 102 · 4
24. 10.1063/1.131606310.1063/1.1316063 ↗
25. 10.1039/C3CE42266F10.1039/C3CE42266F ↗
26. 10.1088/0957-4484/19/26/26560410.1088/0957-4484/19/26/265604 ↗
27. 10.1002/adfm.20080112310.1002/adfm.200801123 ↗
28. 10.1007/s10853-008-2988-010.1007/s10853-008-2988-0 ↗
29. 10.1039/b816034a10.1039/b816034a ↗
30. 10.1126/science.125226810.1126/science.1252268 ↗
31. 10.1063/1.295640410.1063/1.2956404 ↗
32. 10.1002/adma.20110080610.1002/adma.201100806 ↗
33. 10.1002/adma.20130568410.1002/adma.201305684 ↗
34. 10.1126/science.117124510.1126/science.1171245 ↗
35. 10.1021/nl903272n10.1021/nl903272n ↗