journal article·2019-05

Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer

Qidong Xie, Weinan Lin, Baishun Yang, Xinyu Shu, Shaohai Chen, Liang Liu, Xiaojiang Yu, Mark B. H. Breese, Tiejun Zhou, Ming Yang, Zheng Zhang, Shijie Wang, Hongxin Yang, Jianwei Chai, Xiufeng Han, Jingsheng Chen

Advanced Materials· Volume 31· Issue 21
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Abstract

Abstract 2D transition metal dichalcogenides have attracted much attention in the field of spintronics due to their rich spin‐dependent properties. The promise of highly compact and low‐energy‐consumption spin‐orbit torque (SOT) devices motivates the search for structures and materials that can satisfy the requirements of giant perpendicular magnetic anisotropy (PMA) and large SOT simultaneously in SOT‐based magnetic memory. Here, it is demonstrated that PMA and SOT in a heavy metal/transition metal ferromagnet structure, Pt/[Co/Ni]2, can be greatly enhanced by introducing a molybdenum disulfide (MoS2) underlayer. According to first‐principles calculation and X‐ray absorption spectroscopy (XAS), the enhancement of the PMA is ascribed to the modification of the orbital hybridization at the interface of Pt/Co due to MoS2. The enhancement of SOT by the role played by MoS2 is explained, which is strongly supported by the identical behavior of SOT and PMA as a function of Pt thickness. This work provides new possibilities to integrate 2D materials into promising spintronics devices.
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Research context

OpenAlex topics: Magnetic properties of thin films · Multiferroics and related materials · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering National University of Singapore Singapore 117575 Singapore

Department of Electronic Material Institute of Material Research and Engineering A*STAR Singapore 138634 Singapore

Beijing National Laboratory for Condensed Matter Physics Institute of Physics University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 China

CAS Key Laboratory of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China

Singapore Synchrotron Light Source National University of Singapore Singapore 117575 Singapore

College of electronics and information Hangzhou Dianzi University Hangzhou 310018 China

Suzhou Research Institute National University of Singapore Suzhou 215123 China

Funding

National Research Foundation Singapore

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