Flash Light Millisecond Self‐Assembly of High χ Block Copolymers for Wafer‐Scale Sub‐10 nm Nanopatterning

One of the fundamental challenges encountered in successful incorporation of directed self‐assembly in sub‐10 nm scale practical nanolithography is the process compatibility of block copolymers with a high Flory–Huggins interaction parameter (χ). Herein, reliable, fab‐compatible, and ultrafast directed self‐assembly of high‐χ block copolymers is achieved with intense flash light. The instantaneous heating/quenching process over an extremely high temperature (over 600 °C) by flash light irradiation enables large grain growth of sub‐10 nm scale self‐assembled nanopatterns without thermal degradation or dewetting in a millisecond time scale. A rapid self‐assembly mechanism for a highly ordered morphology is identified based on the kinetics and thermodynamics of the block copolymers with strong segregation. Furthermore, this novel self‐assembly mechanism is combined with graphoepitaxy to demonstrate the feasibility of ultrafast directed self‐assembly of sub‐10 nm nanopatterns over a large area. A chemically modified graphene film is used as a flexible and conformal light‐absorbing layer. Subsequently, transparent and mechanically flexible nanolithography with a millisecond photothermal process is achieved leading the way for roll‐to‐roll processability.