Improved Efficiency and Stability of Organic Solar Cells by Interface Modification Using Atomic Layer Deposition of Ultrathin Aluminum Oxide
Source abstract
Abstract
The interfacial contacts between the electron transporting layers (ETLs) and the photoactive layers are crucial to device performance and stability for OSCs with inverted architecture. Herein, atomic layer deposition (ALD) fabricated ultrathin Al2O3 layers are applied to modify the ETLs/active blends (PM6:BTP‐BO‐4F) interfaces of OSCs, thus improving device performance. The ALD‐Al2O3 thin layers on ZnO significantly improved its surface morphology, which led to the decreased work function of ZnO and reduced recombination losses in devices. The simultaneous increase in open‐circuit voltage (), short‐circuit current density () and fill factor (FF) were achieved for the OSCs incorporated with ALD‐Al2O3 interlayers of a certain thickness, which produced a maximum PCE of 16.61%. Moreover, the ALD‐Al2O3 interlayers had significantly enhanced device stability by suppressing degradation of the photoactive layers induced by the photocatalytic activity of ZnO and passivating surface defects of ZnO that may play the role of active sites for the adsorption of oxygen and moisture.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Flexible Electronics (Future Technologies) and Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University Nanjing 210009 China
Department of Chemical and Environmental Engineering University of Nottingham Ningbo China Ningbo 315000 China
Key Laboratory of Flexible Electronics of Zhejiang Province Ningbo Institute of Northwestern Polytechnical University Ningbo 315103 China
Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering Northwestern Polytechnical University Xi'an 710072 China
Funding
Chinese Academy of Sciences · National Natural Science Foundation of China
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