journal article·2022-05

Deep‐Ultraviolet Micro‐LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously

Duo Li, Shangfeng Liu, Zeyuan Qian, Quanfeng Liu, Kang Zhou, Dandan Liu, Shanshan Sheng, Bowen Sheng, Fang Liu, Zhaoying Chen, Ping Wang, Tao Wang, Xin Rong, Renchun Tao, Jianbin Kang, Feiliang Chen, Junjie Kang, Ye Yuan, Qi Wang, Ming Sun, Weikun Ge, Bo Shen, Pengfei Tian, Xinqiang Wang

Advanced Materials· Volume 34· Issue 19
Publisher page

Abstract

Abstract Deep‐ultraviolet (DUV) solar‐blind communication (SBC) shows distinct advantages of non‐line‐of‐sight propagation and background noise negligibility over conventional visible‐light communication. AlGaN‐based DUV micro‐light‐emitting diodes (µ‐LEDs) are an excellent candidate for a DUV‐SBC light source due to their small size, low power consumption, and high modulation bandwidth. A long‐haul DUV‐SBC system requires the light source exhibiting high output power, high modulation bandwidth, and high rate, simultaneously. Such a device is rarely reported. A parallel‐arrayed planar (PAP) approach is here proposed to satisfy those requirements. By reducing the dimensions of the active emission mesa to micrometer scale, DUV µ‐LEDs with ultrahigh power density are created due to their homogeneous injection current and enhanced planar isotropic light emission. Interconnected PAP µ‐LEDs with a diameter of 25 µm are produced. This device has an output power of 83.5 mW with a density of 405 W cm−2 at 230 mA, a wall‐plug efficiency (WPE) of 4.7% at 155 mA, and a high −3 dB modulation bandwidth of 380 MHz. The remarkable high output power and efficiency make those devices a reliable platform to develop high‐modulation‐bandwidth wireless communication and to meet the requirements for bio‐elimination.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Advanced Sensor and Energy Harvesting Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐Optoelectronics School of Physics Peking University Beijing 100871 China

School of Information Science and Technology Fudan University Shanghai 200438 China

Dongguan Sino Crystal Semiconductor Co., Ltd. Dongguan 523500 China

Electron Microscopy Laboratory School of Physics Peking University Beijing 100871 China

Microsystem and Terahertz Research Center China Academy of Engineering Physics Chengdu 610200 China

School of Electronic Science and Engineering University of Electronic Science and Technology of China Chengdu 611731 China

Songshan Lake Materials Laboratory Dongguan 523808 China

Dongguan Institute of Opto‐Electronics Peking University Dongguan 523808 China

Collaborative Innovation Center of Quantum Matter School of Physics Peking University Beijing 100871 China

Peking University Yangtze Delta Institute of Optoelectronics Nantong Jiangsu 226010 China

Funding

National Natural Science Foundation of China

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