Synthesis of Large‐Sized Single‐Crystal Hexagonal Boron Nitride Domains on Nickel Foils by Ion Beam Sputtering Deposition
Source abstract
Abstract
Large-sized single-crystal h-BN domains with a lateral size up to 100 μm are synthesized on Ni foils by ion-beam sputtering deposition. The nucleation density of h-BN is dramatically decreased by reducing the concentrations of both active sites and species on the Ni surface through a brief in situ pretreatment of the substrate and optimization of the growth parameters, enabling the growth of large-sized domains. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
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Research context
OpenAlex topics: Graphene research and applications · Diamond and Carbon-based Materials Research · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Lab of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China
Key Lab of Photochemical Conversion and Optoelectronic Materials Technical Institute of Physics and Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
Funding
National Natural Science Foundation of China · National Basic Research Program of China · Beijing Natural Science Foundation · Strategic Priority Research Program on Space Science · CAS
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