journal article·2021-04

Stacking‐Engineered Heterostructures in Transition Metal Dichalcogenides

Shixuan Wang, Xuehao Cui, Chang'e Jian, Haowei Cheng, Mengmeng Niu, Jia Yu, Jiaxu Yan, Wei Huang

Advanced Materials· Volume 33· Issue 16
Publisher page

Abstract

Abstract The layer‐by‐layer assembly of 2D transition metal dichalcogenide monolayer blocks to form a 3D stack, with a precisely chosen sequence/angle, is the newest development for these materials. In this way, one can create “van der Waals heterostructures (HSs),” opening up a new realm of materials engineering and novel devices with designed functionalities. Herein, a detailed systematic review of transition metal dichalcogenide stacking‐engineered heterostructures, from controllable fabrication to typical characterization, and stacking‐correlated physical behaviors is presented. Furthermore, recent advances in stacking design, such as stacking sequence, twist angles, and moiré superlattice heterojunctions, are also comprehensively summarized. Finally, the remaining challenges and possible strategies for using stacking engineering to tune the properties of 2D materials are also outlined.
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Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Nanjing Tech University (Nanjing Tech) 30 South Puzhu Road Nanjing 211800 China

Frontiers Science Center for Flexible Electronics Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering Northwestern Polytechnical University 127 West Youyi Road Xi'an 710072 China

Funding

National Natural Science Foundation of China

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