Nonvolatile and Programmable Photodoping in MoTe₂ for Photoresist‐Free Complementary Electronic Devices

Abstract 2D transition‐metal dichalcogenide (TMD)‐based electronic devices have been extensively explored toward the post‐Moore era. Huge efforts have been devoted to modulating the doping profile of TMDs to achieve 2D p–n junctions and inverters, the fundamental units in logic circuits. Here, photoinduced nonvolatile and programmable electron doping in MoTe₂ based on a heterostructure of MoTe₂ and hexagonal boron nitride (BN) is reported. The electron transport property in the MoTe₂ device can be precisely controlled by modulating the magnitude of the photodoping gate exerted on BN. Through tuning the polarity of the photodoping gate exerted on BN under illumination, such a doping effect in MoTe₂ can be programmed with excellent repeatability and is retained for over 14 d in the absence of an external perturbation. By spatially controlling the photodoping region in MoTe₂, a photoresist‐free p–n junction and inverter in the MoTe₂ homostructure are achieved. The MoTe₂ diode exhibits a near‐unity ideality factor of ≈1.13 with a rectification ratio of ≈1.7 × 10⁴. Moreover, the gain of the MoTe₂ inverter reaches ≈98, which is among the highest values for 2D‐material‐based homoinverters. These findings promise photodoping as an effective method to achieve 2D‐TMDs‐based nonvolatile and programmable complementary electronic devices.